POLARIZABILITIES OF SHALLOW DONORS IN SILICON: A COMMENT.YOSHIHIRO K; YAMANOUCHI C.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 12; PP. 1479-1480; BIBL. 8 REF.Article

Votive Offering of Tablet as a Speech ActYOSHIHIRO, K.Japanese (The) Journal of Ethnology Tokyo. 1978, Vol 42, Num 4, pp 294-311Article

A STABLE CW HCN LASER.YOSHIHIRO K; YAMANOUCHI C.1974; REV. SCI. INSTRUM.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 767-768; BIBL. 8 REF.Article

FAR-INFRARED PROPERTIES OF INTERACTING DONORS IN ANTIMONY-DOPED GERMANIUM.YOSHIHIRO K; TOKUMOTO M; YAMANOUCHI C et al.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12 PART. 1; PP. 1072-1076; BIBL. 22 REF.Article

ELECTRIC FIELD DEPENDENCE OF JUNCTION PARACONDUCTIVITYYOSHIHIRO K; YAMAJI K; KAJIMURA K et al.1972; J. PHYS. SOC. JAP.; JAP.; DA. 1972; VOL. 33; NO 1; PP. 100-107; BIBL. 15 REF.Serial Issue

A RELIABLE LOW-LOSS AUTOMATIC LIQUID NITROGEN FILLING SYSTEM.YOSHIHIRO K; MORITA S; MITSUGI K et al.1976; CRYOGENICS; G.B.; DA. 1976; VOL. 16; NO 11; PP. 684-685; BIBL. 7 REF.Article

EVIDENCE FOR LIGHT AND HEAVY CONDUCTION ELECTRONS AT THE ZONE CENTER IN KTAO₃UWE H; KINOSHITA J; YOSHIHIRO K et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 6; PP. 3041-3044; BIBL. 10 REF.Article

CONVERSION OF DISILANES TO FUNCTIONAL MONOSILANES. II. PREPARATION OF SOME NITROPHENYLTRIMETHYLSILANES BY TETRAKIS (TRIPHENYLPHOSPHINE) PALLADIUM(0) CATALYZED REACTIONS OF HEXAMETHYLDISILANE WITH NITROHALOBENZENES.MATSUMOTO H; YOSHIHIRO K; NAGASHIMA S et al.1977; J. ORGANOMETAL. CHEM.; SWITZ.; DA. 1977; VOL. 128; NO 3; PP. 409-413; BIBL. 11 REF.Article

LONGITUDINAL MAGNETORESISTANCE OF N-INSB IN THE QUANTUM LIMIT.SUGIHARA K; TOKUMOTO M; YAMANOUCHI C et al.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 41; NO 1; PP. 109-115; BIBL. 10 REF.Article

Natural killer cell activity in herpes zoster in children without underlying diseaseTERADA, K; KAWANO, S; YOSHIHIRO, K et al.Scandinavian journal of infectious diseases. 1993, Vol 25, Num 4, pp 521-524, issn 0036-5548Article

Proliferative response to varicella-zoster virus is inversely related to development of high levels of varicella-zoster virus specific IgG antibodiesTERADA, K; KAWANO, S; YOSHIHIRO, K et al.Scandinavian journal of infectious diseases. 1993, Vol 25, Num 6, pp 775-778, issn 0036-5548Article

Experimental study of semi-solid die casting using mixture of elemental alminum and nickel powdersMOROOKA, T; YUASA, E; KAWAMURA, C et al.Chuzo kogaku. 1997, Vol 69, Num 8, pp 649-655, issn 1342-0429Article

HOCHFESTE WARMGEWALZTE BLECHSTAEHLE FUER AUTOMOBIL-RADKAPPENNITTO H; SATOH T; SAITOH T et al.1982; TETSU TO HAGANE; JPN; DA. 1982-07; VOL. 68; NO 9; PP. 1221-1227; BIBL. 16 REF.Article

Differential dispersal of Chamaesyce maculata seeds by two ant species in JapanOHNISHI, Yoshihiro K; KATAYAMA, Noboru; SUZUKI, Nobuhiko et al.Plant ecology (Dordrecht). 2013, Vol 214, Num 7, pp 907-915, issn 1385-0237, 9 p.Article

Varicella-zoster virus (VZV) reactivation is related to the low repsonse of VZV-specific immunity after chickenpox in infancyTERADA, K; KAWANO, S; YOSHIHIRO, K et al.The Journal of infectious diseases. 1994, Vol 169, Num 3, pp 650-652, issn 0022-1899Article

QUANTIZED HALL RESISTIVITY IN SI-MOS FETS MEASURED AT LIQ. ³HE TEMPERATURESYOSHIHIRO K; KINOSHITA J; INAGAKI K et al.1982; JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; JPN; DA. 1982; VOL. 51; NO 1; PP. 5-6; BIBL. 16 REF.Article

Anomalous behavior of a quantized Hall plateau in a high-mobility Si metal-oxide-semiconductor field-effect transistorYOSHIHIRO, K; VAN DEGRIFT, C. T; CAGE, M. E et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 24, pp 14204-14214, issn 0163-1829Article

Determination of the fine structure constant based on the quantum Hall effectYOSHIHIRO, K; KINOSHITA, J; INAGAKI, K et al.Progress of theoretical physics. Supplement. 1985, Num 84, pp 215-223, issn 0375-9687Article

Characteristics of herpes zoster in otherwise normal childrenTERADA, K; KAWANO, S; YOSHIHIRO, K et al.The Pediatric infectious disease journal. 1993, Vol 12, Num 11, pp 960-961, issn 0891-3668Article

Measurement system for quantum Hall effect utilizing a Josephson potentiometerENDO, T; MURAYAMA, Y; KOYANAGI, M et al.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 2, pp 323-327, issn 0018-9456Article

Anomalously offset quantized Hall plateaus in high-mobility Si-MOSFETsVAN DEGRIFT, C. T; YOSHIHIRO, K; CAGE, M. E et al.Surface science. 1992, Vol 263, Num 1-3, pp 116-119, issn 0039-6028Conference Paper

Comparison of quantized hall resistances R_H(2) and R_H(4) of a GaAs/AlGaAs heterostructure deviceNAGASHIMA, N; DATE, M; WAKABAYASHI, J et al.IEEE transactions on instrumentation and measurement. 1994, Vol 43, Num 4, pp 521-525, issn 0018-9456Article

Observation of quantum hall effect in Si-MOSFET's by means of conventional and Josephson potentiometer systemsYOSHIHIRO, K; KONOSHITA, J; INAGAKI, K et al.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 268-271, issn 0018-9456Article

Effects of breakdown on nondissipative current flow on the quantized hall resistance measurement in Si-MOSFET'sKINOSHITA, J; INAGAKI, K; YAMANOUCHI, C et al.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 264-267, issn 0018-9456Article

Effects of breakdown on nondissipative current flow on the quantized hall resistance measurement in Si-MOSFET'sKINOSHITA, J; INAGAKI, K; YAMANOUCHI, C et al.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 264-267, issn 0018-9456Article